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AP09N20H/J
Advanced Power Electronics Corp.
Simple Drive Requirement Low On-resistance Fast Switching Characteristics G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
200V 380m 8.6A
Description
S
GD
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP09N20J) is available for lowprofile applications.
S
TO-252(H)
G DS
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 200 30 8.6 5.5 36 69 0.55
2
Units V V A A A W W/ mJ A
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
40 8.6 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.8 110 Unit /W /W
Data & specifications subject to change without notice
201112031
AP09N20H/J
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
o
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
Test Conditions VGS=0V, ID=1mA VGS=10V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=200V, VGS=0V VDS=160V, VGS=0V VGS= 30V ID=8.6A VDS=160V VGS=10V VDD=100V ID=8.6A RG=10,VGS=10V RD=11.6 VGS=0V VDS=25V f=1.0MHz
Min. 200 2 -
Typ. 0.24 3.7 23 4 13 12 74 36 44 500 90 40
Max. Units 380 4 10 100 100 37 800 V V/ m V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate-Source Leakage Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
3
Test Conditions IS=8.6A, VGS=0V IS=8.6A, VGS=0V, dI/dt=100A/s
Min. -
Typ. 225 2260
Max. Units 1.3 V ns nC
Reverse Recovery Time Reverse Recovery Charge
Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25 , IAS=8.6A. 3.Pulse width <300us , duty cycle <2%.
o
AP09N20H/J
18
10
16
T C =25 o C
10V 8.0V
8
T C =150 o C ID , Drain Current (A)
14
10V 8.0V 7.0V
ID , Drain Current (A)
12
7.0V
6
10
8
4
6
5.0V
2
4
5.0V
2
V G =4.0V
0
V G =4.0V
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
2.8
2.4
I D =5A V GS =10V
2
Normalized BVDSS (V)
2
Normalized RDS(ON)
-50 0 50 100 150
1.6
1.2
1
0.8
0.4
0
0 -50 0 50 100 150
T j , Junction Temperature (
o
C)
T j , Junction Temperature ( C )
o
Fig 3. Normalized BV DSS v.s. Junction Temperature
7
Fig 4. Normalized On-Resistance v.s. Junction Temperature
5
6
4
5
4
VGS(th) (V)
IS(A)
3
3
T j =150 C
2
o
T j =25 C
o
2
1
0
1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C )
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
AP09N20H/J
15
1000
f=1.0MHz
I D =8.6A VGS , Gate to Source Voltage (V)
12
Ciss V DS =100V V DS =120V V DS =160V C (pF)
100
9
Coss
6
Crss
3
0 0 6 12 18 24 30
10 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R thjc)
Duty factor=0.5
1ms
10
0.2
10ms ID (A) 100ms
1
0.1
0.1
0.05
1s
PDM
t
0.02
T
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
T c =25 o C Single Pulse
0 1 10 100
DC
0.01
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
VDS 90%
VG QG 10V QGS QGD
10% VGS td(on) tr td(off) tf
Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform

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